代做ELEC3207: MOSFET Simulation Exercise 2025代做留学生SQL 程序

日期：2025-11-29 07:06

ELEC3207: MOSFET Simulation Exercise 2025

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(The space for each part should be expanded as required but the report overall should not exceed 12 pages)

Part I

(a) Electrical parameter extraction (methods and results)

(b) Physical device parameter extraction (methods and results)

(c) On current with drain voltage at 3V (method and result)

(d) Theoretical MOSFET parameters (methods and results)

(e) Comparison between calculated and extracted electrical parameters

Part II ELEC3207

(a) Plot of I_on vs. low field electron mobility for V_d= 0.1 V

(b) Plot of I_on vs. low field electron mobility for V_d= 3 V

(c) Discussion/explanation of results

Part III

(method, results and discussion from device scaling investigation)