EEET2097 ELECTRONIC CIRCUITS
ASSIGNMENT 2
Submission date and time: 11:59pm, 18 October 2024
Please note this is individual assignment.
An analogue amplifier circuit is shown in Figure 1 below.
Figure 1 Integrated amplifier circuit.
Circuit Data: VDD = 12 V, -VEE = -12 V, ISS = 1.6 mA
Transistor Data:
Q1, Q2, Q7: NMOS, μn COX = 90 μA⁄V2 , W⁄L = 10 μm⁄1.6 μm , Vtn = 0.7 V, λnL = 0.10 μm⁄V
Q3, Q4: PMOS, μP COX = 50 μA⁄V2 , W⁄L = 10 μm⁄1.6 μm , VtP = −0.8 V, λPL = 0.05 μm⁄V
Q5, Q6: NPN BJT, β = 120, VBE = 0.7 V, VA = 100 V
For the amplifier circuit shown in Figure 1:
a) Calculate the required value of resistor R1 to achieve the required tail current ISS.
(20 marks. To get the full mark, the early effect of all transistors needs to be included. If you exclude the early effect, the highest mark you can get is limited to 10 marks)
b) Calculate the output resistance of the current mirror comprising transistors Q5 and Q6. (4 marks)
c) Calculate the differential mode and common mode small signal voltage gains of the differential amplifiers (the output of differential amplifiers is vo2 as shown in Fig. 1). (12 marks)
d) Calculate the input differential mode resistance and input common mode resistance. (4 marks)
e) Calculate the required value of resistor R2 to achieve an output DC voltage of 7 V (the output port is labelled as vout as shown in Fig. 1). (8 marks)
f) Calculate the differential mode small signal voltage gain of the amplifier circuit (the output
port is labelled as vout as shown in Fig. 1). (5 marks)
g) Calculate the common mode input and the differential input range. (12 marks)
Use NI Multisim simulations (desktop version) to verify your calculations in:
(1) Part (a). (5 marks)
(2) Part (c). (14 marks)
(3) Part (d). (5 marks)
(4) Part (e). (5 marks)
(5) Part (f). (6 marks)
Hint1: For NMOS transistors, use the “MOS_N” available in the component library. To change the parameters, double click the component. You can change the transistor length and width directly in the “Value” tab. To change other parameters, click “Edit model”, and then change accordingly. Here, you will need to change “KP” (i.e., kn(′)), “VTO” (i.e., Vt ), and “LAMBDA” (i.e., λ). Other parameters can be left as default.
Hint 2: For the PMOS transistors, use the “MOS_P” in the component library. The parameters can be changed in the similar way as in Hint 1.
Hint 3: For the BJT transistors, use the “BJT_NPN” in the component library. To change the parameters, double click the component and then select “Edit model” . You will need to change “BF” (i.e., β), “VAF” (i.e., early voltage) and “VJE” (i.e., VBE ) here.
Total marks: 100
版权所有:编程辅导网 2021 All Rights Reserved 联系方式:QQ:99515681 微信:codinghelp 电子信箱:99515681@qq.com
免责声明:本站部分内容从网络整理而来,只供参考!如有版权问题可联系本站删除。